2N7002DW
Elektronische Bauelemente
115 mAMPS, 60VOLTS, RDS(on)=7.5
W
Small Signal MOSFET
RoHS Compliant Product
SOT-363
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–363
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
8
o
0
o
MA XIMUM R AT ING S
R ating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
S ymbol
VDSS
VDGR
VGS
Value
60
60
± 20
Unit
Vdc
Vdc
Vdc
.053(1.35)
.045(1.15)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
.043(1.10)
.035(0.90)
T HE R MA L C HA R A C T E R IS T IC S
C harac teris tic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
S ymbol
PD
R
θ
JA
TJ, Tstg
Max
150
1.8
625
– 55 ~
+150
Unit
mW
mW/°C
°C/W
°C
D
2
G
1
S
1
Dimensions in inches and (millimeters)
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
≦
300 µs, Duty Cycle
≦
2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
S
2
G
2
D
1
MA R K ING DIA G R A M
Κ72
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev. B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
