SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX53/A/B/C
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
BDX53
BDX53A
BDX53B
BDX53C
60
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A, IB=0
V
80
100
VCEsat
VBE sat
Collector-emitter saturation voltage
Base-emitter saturation voltage
BDX53
IC=3A ,IB=12mA
IC=3A ,IB=12mA
VCB=45V, IE=0
VCB=60V, IE=0
VCB=80V, IE=0
2.0
2.5
V
V
BDX53A
Collector cut-off current
BDX53B
ICBO
0.2
mA
BDX53C
BDX53
VCB=100V, IE=0
VCE=22V, IB=0
VCE=30V, IB=0
VCE=40V, IB=0
VCE=50V, IB=0
VEB=5V; IC=0
IC=3A ; VCE=3V
IF=3A
BDX53A
Collector cut-off current
BDX53B
ICEO
0.5
mA
mA
BDX53C
Emitter cut-off current
DC current gain
IEBO
hFE
2.0
2.5
750
VF-1
VF-2
Forward diode voltage
Forward diode voltage
1.8
2.5
V
V
IF=8A
2
SAVANTIC [ Savantic, Inc. ]
