SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX54/A/B/C
APPLICATIONS
·Power linear and switching applications
·Hammer drivers,audio amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BDX53/A/B/C
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BDX53
V
CBO
Collector-base voltage
BDX53A
BDX53B
BDX53C
BDX53
V
CEO
Collector-emitter voltage
BDX53A
BDX53B
BDX53C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
45
60
80
100
45
60
80
100
5
8
12
0.2
60
150
-65~150
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
2.08
UNIT
/W