SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6475
I
C
=-0.1A ;I
B
=0
2N6476
I
C
=-1.5A;I
B
=-0.15A
I
C
=-4A;I
B
=-2A
I
C
=-1.5A ; V
CE
=-4V
I
C
=-4A ; V
CE
=-2.5V
2N6475
I
CEX
Collector cut-off current
2N6476
2N6475
I
CEO
Collector cut-off current
2N6476
I
EBO
h
FE-1
h
FE-2
C
OB
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
2N6475
f
T
Transition frequency
2N6476
I
C
=-0.5A ; V
CE
=-4V
V
CE
=-60V;I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-1.5A ; V
CE
=-4V
I
C
=-4A ; V
CE
=-2.5V
I
E
=0 ; V
CB
=-10V;f=1MHz
V
CE
=-100V;V
BE
=-1.5V
T
C
=100
V
CE
=-120V;V
BE
=-1.5V
T
C
=100
V
CE
=-50V;I
B
=0
CONDITIONS
2N6475 2N6476
SYMBOL
MIN
-100
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
-120
-1.2
-2.5
-2.0
-3.5
-0.1
-2.0
-0.1
-2.0
V
V
V
V
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
mA
-1.0
mA
-1.0
15
2
250
4
150
mA
pF
MHz
5
2