SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6475 2N6476
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·General-purpose medium power for
switching and amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
PARAMETER
2N6475
V
CBO
Collector-base voltage
2N6476
2N6475
V
CEO
Collector-emitter voltage
2N6476
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
-120
-5
-4
-2
40
150
-65~150
V
A
A
W
Open emitter
-130
-100
V
CONDITIONS
VALUE
-110
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
3.125
UNIT
/W