SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6296
V
(BR)CEO
Collector-emitter
breakdown voltage
2N6297
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CEX
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
I
C
=-2A ;I
B
=-8mA
I
C
=-4A ;I
B
=-40mA
I
C
=-4A ;I
B
=-40mA
I
C
=-2A ; V
CE
=-3V
V
CE
=RatedV
CE
;V
BE(off)
=1.5V
T
C
=150
V
CE
=1/2Rated V
CEO
; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-2A ; V
CE
=-3V
I
C
=-4A ; V
CE
=-3V
I
C
=-1.5A ; V
CE
=-3V;f=1.0MHz
I
E
=0 ; V
CB
=-10V;f=0.1MHz
I
C
=-50mA ; I
B
=0
CONDITIONS
2N6296 2N6297
SYMBOL
MIN
-60
TYP.
MAX
UNIT
V
-80
-2.0
-3.0
-4.0
-2.8
-0.5
-5.0
-0.5
-2.0
750
100
4.0
200
MHz
pF
18000
V
V
V
V
mA
mA
mA
2
SAVANTIC [ Savantic, Inc. ]
