SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6296 2N6297
DESCRIPTION
·With TO-66 package
·DARLINGTON
·Complement to type 2N6294/6295
APPLICATIONS
·For high gain amplifier and medium
speed switching applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2N6296
2N6297
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
2N6296
2N6298
Open collector
Open base
CONDITIONS
Open emitter
VALUE
-60
-80
-60
-80
-5
-4
-8
-80
50
150
-65~200
V
A
A
mA
W
V
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
MAX
3.5
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
