SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N4898
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N4899
2N4900
V
CE(sat)
V
BE(sat)
V
BE(on)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
2N4898
I
CEO
Collector cut-off current
2N4899
2N4900
I
CEX
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
I
C
=-1A; I
B
=-0.1A
I
C
=-1A ;I
B
=-0.1A
I
C
=-1A ; V
CE
=-1V
V
CE
=-20V; I
B
=0
V
CE
=-30V; I
B
=0
V
CE
=-40V; I
B
=0
I
C
=-0.1A ;I
B
=0
2N4898 2N4899 2N4900
SYMBOL
CONDITIONS
MIN
-40
-60
-80
TYP.
MAX
UNIT
V
-0.6
-1.3
-1.3
V
V
V
-0.5
mA
V
CE
=Rated V
CEO
; V
BE(off)
=1.5V
T
C
=150
V
CB
=Rated V
CBO
; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-50mA ; V
CE
=-1V
I
C
=-500mA ; V
CE
=-1V
I
C
=-1.0A ; V
CE
=-1V
I
E
=0;V
CB
=-10V;f=1MHz
I
C
=-250mA;V
CE
=-10V
3.0
40
20
10
-0.1
-1.0
-0.1
-1.0
mA
mA
mA
100
100
pF
MHz
2