SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
2N4898 2N4899 2N4900
·With TO-66 package
·Low collector saturation voltage
·Excellent safe operating area
·2N4900 complement to type 2N4912
APPLICATIONS
·Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Ta=25
)
SYMBOL
PARAMETER
2N4898
V
CBO
Collector-base voltage
2N4899
2N4900
2N4898
V
CEO
Collector-emitter voltage
2N4899
2N4900
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-40
-60
-80
-40
-60
-80
-5
-1.0
-4.0
-1.0
25
150
-65~200
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
(th) jc
PARAMETER
Thermal resistance junction to case
VALUE
7.0
UNIT
/W