LC78622NE
Allowable Operating Ranges at Ta = 25°C, V = 0 V
SS
Parameter
Symbol
Conditions
min
3.6
typ
max
5.5
Unit
V
VDD, XVDD, LVDD, RVDD, VVDD
:
V
DD (1)
DD (2)
During normal-speed playback
Supply voltage
VDD, XVDD, LVDD, RVDD, VVDD
During double-speed playback
:
V
3.6
5.5
V
DEFI, COIN, RES, HFL, TES, SBCK, RWC, CQCK,
TAI, TEST1 to TEST5, CS, CONT1 to CONT5, PCCL
0.7 VDD
0.6 VDD
0
VDD
VDD
V
V
V
VIH (1)
VIH (2)
VIL (1)
Input high level voltage
Input low level voltage
EFMIN
DEFI, COIN, RES, HFL, TES, SBCK, RWC, CQCK,
TAI, TEST1 to TEST5, CS, CONT1 to CONT5, PCCL
0.3 VDD
VIL (2)
tSU
EFMIN
0
400
400
0.4 VDD
V
Data setup time
Data hold time
COIN, RWC: Figure 1
COIN, RWC: Figure 1
ns
ns
tHD
High level clock pulse width
Low level clock pulse width
Data read access time
tWH
tWL
SBCK, CQCK: Figures 1, 2 and 3
SBCK, CQCK: Figures 1, 2 and 3
SQOUT, PW: Figures 2 and 3
RWC: Figure 1
400
400
0
ns
ns
ns
ns
ms
µs
ns
ns
ns
tRAC
tRWC
tSQE
tSC
400
Command transfer time
Subcode Q read enable time
Subcode read cycle time
Subcode read enable time
Port input data setup time
Port input data hold time
1000
WRQ: Figure 2, with no RWC signal
SFSY: Figure 3
11.2
136
tSE
SFSY: Figure 3
400
400
400
100
tCSU
tCHD
tRCQ
tCDD
CONT1 to CONT5, RWC: Figure 4
CONT1 to CONT5, RWC: Figure 4
Port input clock setup time
Port output data delay time
RWC, CQCK: Figure 4
CONT1 to CONT8, RWC: Figure 5
EFMIN: Slice level control
XIN: Capacitor-coupled input
EFMIN
ns
1200
10
ns
V
IN (1)
IN (2)
fop
1.0
1.0
Vp-p
Vp-p
MHz
MHz
Input level
V
Operating frequency range
Crystal oscillator frequency
fX
XIN, XOUT
16.9344
Electrical Characteristics at Ta = 25°C, V = 5 V, V = 0 V
DD
SS
Parameter
Current drain
Symbol
IDD
Conditions
min
typ
25
max
35
Unit
mA
VDD, XVDD, LVDD, RVDD, VVDD
DEFI, EFMIN, COIN, RES, HFL, TES, SBCK,
RWC, CQCK: TEST1: VIN = VDD
I
IH (1)
5
µA
µA
µA
Input high level current
Input low level current
IIH (2)
IIL
TAI, TEST2 to TEST5, CS, PCCL: VIN = VDD = 5.5 V
25
–5
75
DEFI, EFMIN, COIN, RES, HFL, TES, SBCK, RWC,
CQCK: TAI, TEST1 to TEST5, CS, PCCL: VIN = 0 V
+
–
EFMO, CLV , CLV , V/P, PCK, FSEQ, TOFF,
V
OH (1)
4
V
+
–
TGL, JP , JP , EMPH/CONT6, EFLG, FSX: IOH = –1 mA
MUTEL/CONT7, MUTER/CONT8, C2F, SBSY, PW,
SFSY, WRQ, SQOUT, TST11, 16M, 4.2M, CONT1 to
CONT5: IOH = –0.5 mA
Output high level voltage
V
OH (2)
OH (3)
4
V
V
V
V
DOUT: IOH = –12 mA
4.5
+
–
EFMO, CLV , CLV , V/P, PCK, FSEQ,
+
–
VOL (1)
TOFF, TGL, JP , JP , EMPH/CONT6, EFLG, FSX:
IOH = 1 mA
1
MUTEL/CONT7, MUTER/CONT8,
C2F, SBSY, PW, SFSY, WRQ, SQOUT,
TST11, 16M, 4.2M, CONT1 to CONT5:
Output low level voltage
VOL (2)
0.4
V
IOH = 2 mA
V
OL (3)
DOUT: IOH = 12 mA
0.5
5
V
+
–
+
–
PDO, CLV , CLV , JP , JP , CONT1 to CONT5:
IOFF (1)
IOFF (2)
µA
VOUT = VDD
Output off leakage current
Charge pump output current
+
–
+
–
PDO, CLV , CLV , JP , JP , CONT1 to CONT5:
–5
µA
VOUT = 0 V
IPDOH
IPDOL
PDO: RISET = 68 kΩ
PDO: RISET = 68 kΩ
64
80
96
µA
µA
–96
–80
–64
No. 6015-4/31
SANYO [ SANYO SEMICON DEVICE ]
