LB1846M, 1848M
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Maximum supply voltage
Symbol
Conditions
Ratings
Unit
V
V
max
–0.3 to +8.0
CC
V
Output voltage
V
+ V
SF
V
OUT
CC
Input voltage
V
–0.3 to +8.0
800
V
IN
Ground pin outflow current
I
Per channel
mA
mW
mW
°C
°C
GND
Pd max1
Pd max2
Topr
Independent IC
When mounted*
350
Allowable power dissipation
870
Operating temperature
Storage temperature
–20 to +75
–40 to +150
Tstg
3
Note: *On the specified circuit board (a 114.3 × 76.2 × 1.5-mm glass-epoxy printed circuit board)
Allowable Operating Ranges at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
2.5 to 7.5
2.0 to 7.5
–0.3 to +0.7
Unit
V
Supply voltage
V
CC
Input high-level voltage
Input low-level voltage
V
V
IH
V
IL
V
Electrical Characteristics at Ta = 25°C, V = 5.0 V
CC
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[LB1846M]
I
I
0
1
IN1, 2, 3, 4 = 0 V
IN1, 3 = 3 V, IN2, 4 = 0 V
0.1
10
µA
CC
CC
Current drain
30
40
mA
V
I
= 3 V or 0 V, V
= 200 mA
= 3 to 7.5 V,
IN
CC
V
V
1
0.27
0.4
V
OUT
OUT
OUT
Output saturation voltage
V
= 3 V or 0 V, V
= 4 to 7.5 V,
IN
CC
2
0.55
150
0.8
V
I
= 400 mA
= 5 V
IN
OUT
Input current
I
V
200
µA
IN
[Spark Killer Diode]
Reverse current
Forward voltage
[LB1848M]
I (leak)
S
30
µA
V
V
I
= 400 mA
1.7
SF
OUT
I
I
0
1
ENA = 0 V, V = 3 V or 0 V
IN
0.1
25
10
35
µA
CC
CC
Current drain
ENA = 3 V, V = 3 V or 0 V
IN
mA
ENA = 3 V, V = 3 V or 0 V,
IN
V
V
1
0.27
0.55
0.4
0.8
V
V
OUT
OUT
V
= 3 to 7.5 V, I
= 200 mA
CC
OUT
Output saturation voltage
ENA = 3 V, V = 3 V or 0 V,
IN
2
V
= 4 to 7.5 V, I
= 400 mA
CC
OUT
Input current 1
I
V
= 5 V
IN
75
85
100
110
µA
µA
IN
Input current 2
I
ENA = 5 V
ENA
[Spark Killer Diode]
Reverse current
Forward voltage
I (leak)
S
30
µA
V
V
I
= 400 mA
OUT
1.7
SF
Note: The thermal shutdown circuit function values are design guarantees, and are not tested.
No. 5339-2/8
SANYO [ SANYO SEMICON DEVICE ]
