25�50�75�1001
120140�
AK55GB40/80
Gate Characteristics
On-State Voltage max
5�
2�
Peak Forward Gate Voltag(10V)�
1�
10
2�
Tj=125℃�
5�
2�
10
2�
5�
0�
10
2�
5�
1�
10
25℃�
Maximum Gate Voltage that will not trigger any uni(t 0.25V)�
125℃�
2�
5�
2�
101�
ー
1�
2�
3�
0.5�
1.0�
1.5�
2.0�
2.5�
3.0�
10
2�
5� 10
2�
5� 10
2�
5�
Gate Curren(t mA)�
On-State Voltage(V)�
Average On-State Current Vs Maximum Allowable�
Case Temperature(Single phase half wave)
Average On-State Current Vs Power Dissipation�
(Single phase half wave)
120�
140�
Per one element
Per one element
2
D.C.
120�
100�
80�
60�
40�
20�
100�
80�
60�
40�
20�
0�
360。�
: Conduction Angle
θ=180゜�
θ=120゜�
θ= 9 0 ゜�
θ= 6 0 ゜�
θ= 3 0 ゜�
2
θ= 3 0 ゜�
θ= 9 0 ゜� θ=180゜�
D.C.
θ= 6 0 ゜�
θ=120゜�
360。�
: Conduction Angle
�
0� 10� 20� 30� 40� 50� 60� 70� 80� 90� 100�
0
10� 20� 30� 40� 50� 60� 70� 80� 90� 100�
Average On-State Curren(t A)�
Average On-State Curren(t A)�
Surge On-State Current Rating�
(Non-Repetitive)�
Transient Thermal Impedance
0�
1�
10 2� 5�10
0.6�
0.5�
0.4�
0.3�
0.2�
0.1�
0�
1200�
Per one element
Tj=25℃ start
Junction to Case
1000�
Per one element
800�
600�
400�
200�
0�
60Hz
50Hz
ー
ー
ー
0ꢀ �
103� 2� 5�102� 2� 5�101� 2� 5�10
�
1�
2�
5�
10
20�
50� 100�
Time t(sec)�
Time(cycles)�
RMS On-State Current Vs�
Allowable Case Temperature
W3;Three phase�
Output Current
W1;Bidirectional connection
bidiretional connection
500�
130�
120�
110�
Rth:0.8C/W�
ld(Ar.m.s)
Id(RMS)�
Conduction Angle 180°�
W3
Rth:0.6C/W�
Rth:0.4C/W�
Rth:0.2C/W�
Rth:0.1C/W�
�
90�
400�
300�
200�
100�
0�
Rth:0.8C/W
Rth:0.4C/W
Rth:0.3C/W
Rth:0.2C/W
Rth:0.1C/W
θ= 3 0゜�
θ= 6 0 ゜1�00�
100�
θ= 9 0 ゜�
θ= 12 0゜�
90�
θ=180゜�
�
80�
70�
60�
50�
110�
120�
W1
90�
100�
110�
120�
Id(Ar.m.s.)�
125� 125�
0�
50� 100� 150�
0� 25�50�75�100�125�
Ambient Temperature(℃)�
0�
80�
25� 0�20�40�60� 100
Output Curren(t A)�
RMS On-State Curren(t A)�
Ambient Temperature(℃)�