THYRISTOR MODULE
AK55GB40/80
UL;E76102（M）
Power ThyristorModule AK55GB series are designed for various rectifier circuits and
power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available, and electrically isolated mounting base make
your mechanical design easy.
93.5max
80
2-φ6.5
Isolated mounting base
（Applications）
AC/DC motor drives
Heater controls
Light dimmers
3
2
1
● IT（AV）55A, I
T（RMS）
122A, I
1100A
TSM
● di/dt 150 A/μs
● dv/dt 500V/μs
16.5
23
23
3-M5
Static switches
110TAB
Internal Configurations
G2
K2
A2･K1
3
1
K1G1
A1K2
2
Unit：A
■Maximum Ratings
（Tj＝25℃ unless otherwise specified）
Ratings
Symbol
Item
Unit
AK55GB40
AK55GB80
VDRM
400
800
V
Repetitive Peak Off-State Voltage
Symbol
Item
Conditions
Ratings
Unit
A
T（AV）
I
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
55
Single phase, half wave, 180°conduction, Tc：89℃
T（RMS）
I
122
A
Tc：89℃
1
TSM
I
A
／cycle, 50Hz/60Hz, peak value, non-reqetitive
1000/1100
2
2
2
2
I t
I t
Value for one cycle of surge current
5000
10
A S
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
W
W
G（AV）
P
3
FGM
I
3
A
FGM
V
10
V
Peak Gate Voltage（Forward）
Peak Gate Voltage（Reverse）
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage（R.M.S.）
Operating Junction Temperature
Storage Temperature
RGM
V
5
V
1
G
D
DRM
G
150
2500
di/dt
I ＝100mA，Tj＝25℃，V ＝
／
2V ，dI
/
dt＝0.1A/μs
A/μs
V
ISO
V
A.C. 1 minute
Tj
－40 to ＋125
－40 to ＋125
4.7（48）
2.7（28）
170
℃
℃
Tstg
Mounting（M6） Recommended Value 2.5-3.9（25-40）
Terminal（M5） Recommended Value 1.5-2.5（15-25）
Typical Value
Mounting
Torque
N･ｍ
（㎏f･B）
Mass
g
■Electrical Characteristics
Symbol
Item
Conditions
Ratings
20
Unit
mA
V
DRM
I
Repetitive Peak Off-State Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-trigger Gate, Voltage, min
Turn On Time, max.
DRM
at V , Single phase, half wave, Tj＝125℃
TM
V
1.35
100/3
0.25
10
On-State Current 165A, Tj＝125℃Inst. measurement
GT
GT
/V
T
D
I
Tj＝25℃，I ＝1A，V ＝6V
mA/V
V
1
GD
V
D
DRM
Tj＝125℃，V ＝
／
2V
1
tgt
T
G
D
DRM
G
I ＝55A，I ＝100mA，Tj＝25℃，V ＝／V ，dI
/dt＝0.1A/μs
μs
2
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ
D
DRM
500
dv/dt
Tj＝125℃，V ＝／V ，Exponential wave.
V/μs
mA
mA
3
H
I
50
Tj＝25℃
Tj＝25℃
L
I
Lutching Current, typ
100
Junction to case, per 1／ Module
0.50
0.25
2
Thermal Impedance, max.
Rth（j-c）
℃/W
Junction to case, per 1 Module
＊mark：Thyristor and Diode part. No mark：Thyristor part
SanRex
®
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