S3P70F4 OTP
S3C70F2/C70F4/P70F4
Table 16-7. Input/Output Capacitance
°
(TA = 25 C, VDD = 0 V )
Parameter
Input
Capacitance
Symbol
Condition
Min
Typ
Max
Units
CIN
f = 1 MHz; Unmeasured pins
are returned to VSS
–
–
15
pF
COUT
CIO
Output
Capacitance
15
15
pF
pF
I/O Capacitance
Table 16-8. Comparator Electrical Characteristics
(TA = – 40 C to + 85 C, VDD = 4.0 V to 5.5V, VSS = 0 V)
°
°
Parameter
Symbol
–
Condition
Min
Typ
Max
Units
VDD
Input Voltage Range
–
0
–
V
VREF
VDD
Reference Voltage
Range
–
0
–
V
VCIN
Input Voltage Accuracy
Input Leakage Current
–
–
–
–
–
mV
±150
ICIN
I
REF
– 3
3
mA
,
Table 16-9. A.C. Electrical Characteristics
(TA = – 40 C to + 85 C, VDD = 2.0 V to 5.5 V)
°
°
Parameter
Symbol
Conditions
Min
Typ
Max
Units
tCY
V
DD
= 2.7 V to 5.5 V
Instruction Cycle
Time
0.67
–
64
ms
V
V
= 2.0 V to 5.5 V
= 2.7 V to 5.5 V
0.95
0
DD
fTI
TCL0 Input
Frequency
–
–
–
1.5
MHz
DD
V
V
= 2.0 V to 5.5 V
= 2.7 V to 5.5 V
1
–
MHz
DD
tTIH, tTIL
TCL0 Input High,
Low Width
0.48
ms
DD
V
V
= 2.0 V to 5.5 V
= 2.7 V to 5.5 V
1.8
DD
tKCY
800
–
ns
DD
SCK Cycle Time
External SCK source
Internal SCK source
670
V
DD
= 2.0 V to 5.5 V
3200
External SCK source
Internal SCK source
3800
16–8
SAMSUNG [ SAMSUNG ]
