OneNAND512Mb(KFG1216U2B-xIB6)
FLASH MEMORY
OTP Block Program Operation Flow Chart
Write ’FBA’ of Flash
Start
Add: F100h DQ=FBA3)
Write ’FBA’ of Flash1)
Add: F100h DQ=FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write 0 to interrupt register4)
Add: F241h DQ=0000h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Write 0 to interrupt register4)
Add: F241h DQ=0000h
Wait for INT register
low to high transition
Write Program command
Add: F220h
Add: F241h DQ[15]=INT
DQ=0080h or 001Ah
Automatically
checked
Write Data into DataRAM2)
Add: DP DQ=Data-in
Automatically
updated
NO
OTPL=0?
YES
Update Controller
Status Register
NO
Data Input
Completed?
Wait for INT register
low to high transition
Add: F240h
DQ[14]=1(Lock), DQ[10]=1(Error)
Add: F241h DQ[15]=INT
Wait for INT register
low to high transition
Read Controller
Status Register
Add: F241h DQ[15]=INT
Add: F240h DQ[10]=0(Pass)
Read Controller
Status Register
OTP Programming completed
Add: F240h DQ[10]=1(Error)
Do Cold/Warm/Hot
/NAND Flash Core reset
Do Cold/Warm/Hot
/NAND Flash Core reset
OTP Exit
OTP Exit
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FBA should point the unlocked area address among NAND Flash Array address map.
4) ’Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
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SAMSUNG [ SAMSUNG ]
