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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
3.11.2 OTP Block Program Operation  
FLASH MEMORY  
An OTP Block Program Operation accesses the OTP area and programs content from the DataRAM on-chip buffer to the designated  
page(s) of the OTP.  
A memory location in the OTP area can be programmed only one time (no erase operation permitted).  
The OTP area is programmed using the same sequence as normal program operation after being accessed by the command (see  
section 3.8 for more information).  
Programming the OTP Area  
Issue the OTP Access Command  
Write data into the DataRAM (data can be input at anytime between the "Start" and "Write Program" commands  
Issue a Flash Block Address (FBA) which is unlocked area address of NAND Flash Array address map.  
Issue a Write Program command to program the data from the DataRAM into the OTP  
When the OTP Block programming is complete,  
do a Cold-, Warm-, Hot-, NAND Flash Core Reset to exit the OTP Access mode.  
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