SYncHronouS SrAM orderinG inForMAtion
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
K
7
X
X
X
X
X
X
X
X
-
X
X
X
X
X
SAMSUNG Memory
Packaging Type
Speed
Sync SRAM
Small Classification
Density
Speed
Temp, Power
Package
---
Density
Organization
Organization
Vcc, Interface, Mode
Generation
Vcc, Interface, Mode
49: 2.5V,LVTTL,Hi SPEED
WAFER, CHIP BIZ Level Division
0: NONE,NONE
1. Memory (K)
52: 2.5V,1.5/1.8V,HSTL,Burst2
54: 2.5V,1.5/1.8V,HSTL,Burst4
62: 2.5V/1.8V,HSTL,Burst2
64: 2.5V/1.8V,HSTL,Burst4
66: 2.5V,HSTL,R-R
2. Sync SRAM: 7
3. Small Classification
1: Hot DC sort
2: Hot DC, selected AC sort
14~15. Speed
A: Sync Pipelined Burst
B: Sync Burst
74: 1.8V,2.5V,HSTL,All
Sync Burst,Sync Burst + NtRAM
82: 1.8V,HSTL,Burst2
D: Double Data Rate
< Mode is R-L > (Clock Accesss Time)
84: 1.8V,HSTL,Burst4
I: Double Data Rate II, Common I/O
J: Double Data Rate, Separate I/O
K: Double Data II+, Common I/O
M: Sync Burst + NtRAM
N: Sync Pipelined Burst + NtRAM
P: Sync Pipe
65: 6.5ns
75: 7.5ns
85: 8.5ns
70: 7ns
80: 8ns
88: 1.8V,HSTL,R-R
T2: 1.8V,2Clock Latency,Burst2
T4: 1.8V,2Clock Latency,Burst4
U2: 1.8V,2.5Clock Latency,Burst2
U4: 1.8V,2.5Clock Latency,Burst4
Other Small Classification (Clock Cycle Time)
10: 100MHz
11: 117MHz
14: 138MHz
20: 200MHz
13: 133MHz
Q: Quad Data Rate I
10. Generation
16: 166MHz
R: Quad Data Rate II
25: 250MHz
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
S: Quad Data Rate II+
26: 250MHz(1.75ns)
30: 300MHz
27: 275MHz
33: 333MHz
37: 375MHz
42: 425MHz
4~5. Density
35: 350MHz
80: 8M
40: 4M
64: 72M
16: 18M
40: 400MHz(t-CYCLE)
45: 450MHz
32: 36M
11. “--”
50: 500MHz (except Sync Pipe)
6~7. Organization
16. Packing Type (16 digit)
12. Package
08: x8
09: x9
- Common to all products, except of Mask ROM
- Divided into TAPE & REEL (In Mask ROM, divided
into TRAY, AMMO packing separately)
H: BGA,FCBGA,PBGA
G: BGA, FCBGA, FBGA (LF)
F: FBGA
18: x18
36: x36
32: x32
8~9. Vcc, Interface, Mode
E: FBGA (LF)
Type
Packing Type
New Marking
Q: (L)QPF
00: 3.3V,LVTTL,2E1D WIDE
01: 3.3V,LVTTL,2E2D WIDE
08: 3.3V,LVTTL,2E2D Hi SPEED
09: 3.3V,LVTTL,Hi SPEED
11: 3.3V,HSTL,R-R
Component TAPE & REEL
T
P: (L)QFP(LF)
C: CHIP BIZ
Other (Tray, Tube, Jar) 0 (Number)
Stack
S
Y
A
W: WAFER
Component TRAY
(Mask ROM) AMMO PACKING
13. Temp, Power
12: 3.3V,HSTL,R-L
Module
MODULE TAPE & REEL P
MODULE Other Packing M
14: 3.3V,HSTL,R-R Fixed ZQ
22: 3.3V,LVTTL,R-R
COMMON (Temp,Power)
0: NONE,NONE (Containing of error
handling code)
23: 3.3V,LVTTL,R-L
25: 3.3V,LVTTL,SB-FT WIDE
30: 1.8/2.5/3.3V,LVTTL,2E1D
31: 1.8/2.5/3.3V,LVTTL,2E2D
35: 1.8/2.5/3.3V,LVTTL,SB-FT
44: 2.5V,LVTTL,2E1D
C: Commercial,Normal
E: Extended,Normal
I: Industrial,Normal
45: 2.5V,LVTTL,2E2D
20
SRAM Ordering Information
2H 2010
www.samsung.com/semi/sram
SAMSUNG [ SAMSUNG ]
