K9F2808U0B-YCB0,YIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0
FLASH MEMORY
Revision History
Revision No. History
Draft Date
Remark
0.4
0.5
0.6
1. IOL(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
Nov 5th 2001
Preliminary
-typ. Value: 8mA -->4mA
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
Feb 15th 2002
1. Parameters are changed in 1.8V part(K9F2808Q0B) .
- tCH is changed from 15ns to 20ns
- tCLH is changed from 15ns to 20ns
- tALH is changed from 15ns to 20ns
- tDH is changed from 15ns to 20ns
May 3rd 2002
1. Parameters are changed in 1.8V part(K9F2808Q0B) .
- tRP is changed from 25ns to 35ns
- tWB is changed from 100ns to 150ns
- tREA is changed from 40ns to 45ns
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
2
SAMSUNG [ SAMSUNG ]
