K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
TSOP1
TSOP1
TSOP1
WSOP1
TSOP1
K9F1208D0A-Y,P
K9F1216D0A-Y,P
K9F1208U0A-Y,P
K9F1208U0A-V,F
K9F1216U0A-Y,P
X8
2.4 ~ 2.9V
X16
X8
2.7 ~ 3.6V
X16
FEATURES
· Voltage Supply
· Fast Write Cycle Time
- 2.65V device(K9F12XXD0A) : 2.4~2.9V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
· Organization
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Memory Cell Array
- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
- Data Register
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit
· Automatic Program and Erase
- Page Program
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word
· Page Read Operation
- Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back
· Unique ID for Copyright Protection
· Package
- K9F12XXX0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208U0A-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F12XXX0A-PCB0/PIB0
- Page Size
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Random Access
- Serial Page Access : 50ns(Min.)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208U0A-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0A-V,F(WSOPI ) is the same device as
K9F1208U0A-Y,P(TSOP1) except package type.
: 12ms(Max.)
GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte(X8
device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-
chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F12XXX0A¢s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F12XXX0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
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SAMSUNG [ SAMSUNG ]
