K6X1008C2D Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Vcc
Min
4.5
0
Typ
Max
5.5
0
Unit
V
Supply voltage
Ground
5.0
Vss
0
-
V
Vcc+0.52)
0.8
Input high voltage
Input low voltage
Note:
VIH
2.2
V
-0.53)
VIL
-
V
1. Commercial Product: TA=0 to 70°C, Otherwise specified
Industrial Product: TA=-40 to 85°C, Otherwise specified
Automotive Product: TA=-40 to 125°C, Otherwise specified
2. Overshoot: Vcc+3.0V in case of pulse width£30ns.
3. Undershoot: -3.0V in case of pulse width£30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Symbol
CIN
Test Condition
VIN=0V
Min
Max
8
Unit
pF
-
-
Input/Output capacitance
CIO
VIO=0V
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
ILI
Test Conditions
Min Typ Max Unit
Input leakage current
VIN=Vss to Vcc
-1
-1
-
-
-
-
1
1
5
mA
mA
mA
Output leakage current
Operating power supply current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read
ICC
Cycle time=1ms, 100%duty, IIO=0mA, CS1£0.2V, CS2³ Vcc-0.2V,
VIN£0.2V or VIN³ VCC-0.2V
ICC1
ICC2
-
-
-
-
7
mA
Average operating current
Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH,
VIN=VIH or VIL
25 mA
Output low voltage
Output high voltage
Standby Current(TTL)
VOL
VOH
ISB
IOL=2.1mA
-
-
-
-
-
-
-
0.4
-
V
V
IOH=-1.0mA
2.4
CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
-
-
-
-
0.4 mA
10 mA
15 mA
25 mA
K6X1008C2D-B
CS1³ Vcc-0.2V, CS2³ Vcc-0.2V or
CS2£0.2V, Other inputs=0~Vcc
Standby Current(CMOS)
ISB1
K6X1008C2D-F
K6X1008C2D-Q
4
Revision 1.0
September 2003
SAMSUNG [ SAMSUNG ]
