K6X1008C2D Family
CMOS SRAM
128Kx8 bit Low Power full CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
· Process Technology: Full CMOS
· Organization: 128K x 8
The K6X1008C2D families are fabricated by SAMSUNG¢s
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-DIP-600, 32-SOP-525,
32-SOP-525, 32-TSOP1-0820F
PRODUCT FAMILY
Power Dissipation
PKG Type
Operating
Temperature
Product Family
Vcc Range
Speed
Standby
Operating
(ICC2, Max)
(ISB1, Max)
K6X1008C2D-B
K6X1008C2D-F
K6X1008C2D-Q
Commercial(0~70°C)
Industrial(-40~85°C)
Automotive(-40~125°C)
10mA
15mA
25mA
32-DIP-600, 32-SOP-525,
32-SOP-525
4.5~5.5V
551)/70ns
25mA
32-TSOP1-0820F
32-SOP-525, 32-TSOP1-0820F
1. The parameters are tested with 50pF test load
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
VCC
A15
CS2
WE
A13
A8
NC
A16
A14
A12
A7
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
2
3
A11
A9
A8
1
2
3
4
5
6
7
8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
4
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
Row
addresses
Row
select
5
Memory array
A13
WE
CS2
A15
VCC
NC
A16
A14
A12
A7
A6
6
32-SOP
32-DIP
A9
A5
7
A11
OE
32-TSOP
Type1-Forward
A4
8
9
A3
9
10
11
12
13
14
15
16
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
A2
10
11
12
13
14
15
16
A1
A6
A5
A4
A1
A2
A3
A0
I/O1
I/O8
Data
cont
I/O Circuit
I/O1
I/O2
I/O3
VSS
Column select
Data
cont
Column Addresses
Name
Function
CS1, CS2
OE
Chip Select Input
Output Enable Input
Write Enable Input
Data Inputs/Outputs
Address Inputs
Power
CS1
Control
logic
CS2
WE
WE
OE
I/O1~I/O8
A0~A16
Vcc
Vss
Ground
NC
No Connection
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
September 2003