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K6X1008C2D-PF55 参数 Datasheet PDF下载

K6X1008C2D-PF55图片预览
型号: K6X1008C2D-PF55
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx8位低功耗CMOS静态RAM [128Kx8 bit Low Power CMOS Static RAM]
分类和应用:
文件页数/大小: 10 页 / 179 K
品牌: SAMSUNG [ SAMSUNG ]
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K6X1008C2D Family  
CMOS SRAM  
128Kx8 bit Low Power full CMOS Static RAM  
FEATURES  
GENERAL DESCRIPTION  
· Process Technology: Full CMOS  
· Organization: 128K x 8  
The K6X1008C2D families are fabricated by SAMSUNG¢s  
advanced CMOS process technology. The families support  
verious operating temperature ranges and have various pack-  
age types for user flexibility of system design. The families  
also support low data retention voltage for battery back-up  
operation with low data retention current.  
· Power Supply Voltage: 4.5~5.5V  
· Low Data Retention Voltage: 2V(Min)  
· Three state output and TTL Compatible  
· Package Type: 32-DIP-600, 32-SOP-525,  
32-SOP-525, 32-TSOP1-0820F  
PRODUCT FAMILY  
Power Dissipation  
PKG Type  
Operating  
Temperature  
Product Family  
Vcc Range  
Speed  
Standby  
Operating  
(ICC2, Max)  
(ISB1, Max)  
K6X1008C2D-B  
K6X1008C2D-F  
K6X1008C2D-Q  
Commercial(0~70°C)  
Industrial(-40~85°C)  
Automotive(-40~125°C)  
10mA  
15mA  
25mA  
32-DIP-600, 32-SOP-525,  
32-SOP-525  
4.5~5.5V  
551)/70ns  
25mA  
32-TSOP1-0820F  
32-SOP-525, 32-TSOP1-0820F  
1. The parameters are tested with 50pF test load  
PIN DESCRIPTION  
FUNCTIONAL BLOCK DIAGRAM  
Clk gen.  
Precharge circuit.  
VCC  
A15  
CS2  
WE  
A13  
A8  
NC  
A16  
A14  
A12  
A7  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
2
3
A11  
A9  
A8  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
4
A10  
CS1  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
VSS  
I/O3  
I/O2  
I/O1  
A0  
Row  
addresses  
Row  
select  
5
Memory array  
A13  
WE  
CS2  
A15  
VCC  
NC  
A16  
A14  
A12  
A7  
A6  
6
32-SOP  
32-DIP  
A9  
A5  
7
A11  
OE  
32-TSOP  
Type1-Forward  
A4  
8
9
A3  
9
10  
11  
12  
13  
14  
15  
16  
A10  
CS1  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
A2  
10  
11  
12  
13  
14  
15  
16  
A1  
A6  
A5  
A4  
A1  
A2  
A3  
A0  
I/O1  
I/O8  
Data  
cont  
I/O Circuit  
I/O1  
I/O2  
I/O3  
VSS  
Column select  
Data  
cont  
Column Addresses  
Name  
Function  
CS1, CS2  
OE  
Chip Select Input  
Output Enable Input  
Write Enable Input  
Data Inputs/Outputs  
Address Inputs  
Power  
CS1  
Control  
logic  
CS2  
WE  
WE  
OE  
I/O1~I/O8  
A0~A16  
Vcc  
Vss  
Ground  
NC  
No Connection  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.  
2
Revision 1.0  
September 2003