K6T1008C2E Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Symbol
Vcc
Product
Min
4.5
0
Typ
Max
5.5
0
Unit
V
K6T1008C2E Family
All Family
5.0
Vss
0
-
V
Vcc+0.52)
0.8
Input high voltage
Input low voltage
Note:
VIH
K6T1008C2E Family
K6T1008C2E Family
2.2
V
-0.53)
VIL
-
V
1. Commercial Product: TA=0 to 70°C
Industrial Product: TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+3.0V in case of pulse width£30ns.
3. Undershoot: -3.0V in case of pulse width£30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
1
)
CAPACITANCE (f=1MHz, TA=25°C)
Item
Input capacitance
Symbol
Test Condition
Min
Max
6
Unit
CIN
CIO
VIN=0V
VIO=0V
-
-
pF
pF
Input/Output capacitance
8
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
ILI
Test Conditions
Min Typ Max Unit
Input leakage current
VIN=Vss to Vcc
-1
-1
-
-
-
-
1
1
mA
mA
Output leakage current
Operating power supply current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read
ICC
10 mA
mA
50 mA
Cycle time=1ms, 100%duty, IIO=0mA, CS1£0.2V, CS2³ Vcc-0.2V, VIN£0.2V
or VIN³ VCC-0.2V
ICC1
-
-
7
Average operating current
Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL
IOL=2.1mA
ICC2
VOL
VOH
ISB
-
-
-
-
-
-
Output low voltage
-
2.4
-
0.4
-
V
V
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
IOH=-1.0mA
CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
CS1³ Vcc-0.2V, CS2³ Vcc-0.2V or CS2£0.2V, Other inputs=0~Vcc
3
mA
mA
501)
ISB1
-
1. 50mA for Low power product, in case of Low Low power products are comercial=10mA, industrial=15mA.
4
Revision 3.0
March 2000
SAMSUNG [ SAMSUNG ]
