欢迎访问ic37.com |
会员登录 免费注册
发布采购

K6T1008C2E-TF70 参数 Datasheet PDF下载

K6T1008C2E-TF70图片预览
型号: K6T1008C2E-TF70
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx8位低功耗CMOS静态RAM [128Kx8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 192 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K6T1008C2E-TF70的Datasheet PDF文件第1页浏览型号K6T1008C2E-TF70的Datasheet PDF文件第3页浏览型号K6T1008C2E-TF70的Datasheet PDF文件第4页浏览型号K6T1008C2E-TF70的Datasheet PDF文件第5页浏览型号K6T1008C2E-TF70的Datasheet PDF文件第6页浏览型号K6T1008C2E-TF70的Datasheet PDF文件第7页浏览型号K6T1008C2E-TF70的Datasheet PDF文件第8页浏览型号K6T1008C2E-TF70的Datasheet PDF文件第9页  
K6T1008C2E Family  
CMOS SRAM  
128Kx8 bit Low Power CMOS Static RAM  
FEATURES  
GENERAL DESCRIPTION  
· Process Technology: TFT  
The K6T1008C2E families are fabricated by SAMSUNG¢s  
advanced CMOS process technology. The families support  
various operating temperature ranges and have various pack-  
age types for user flexibility of system design. The families  
also support low data retention voltage for battery back-up  
operation with low data retention current.  
· Organization: 128Kx8  
· Power Supply Voltage: 4.5~5.5V  
· Low Data Retention Voltage: 2V(Min)  
· Three state output and TTL Compatible  
· Package Type: 32-DIP-600, 32-SOP-525,  
32-TSOP1-0820F/R  
PRODUCT FAMILY  
Power Dissipation  
Product Family  
Operating Temperature Vcc Range  
Speed  
PKG Type  
Standby  
(ISB1, Max)  
Operating  
(ICC2, Max)  
K6T1008C2E-L  
K6T1008C2E-B  
K6T1008C2E-P  
K6T1008C2E-F  
50mA  
10mA  
50mA  
15mA  
32-DIP-600, 32-SOP-525  
32-TSOP1-0820F/R  
Commercial(0~70°C)  
Industrial(-40~85°C)  
4.5~5.5V  
551)/70ns  
50mA  
32-SOP -525  
32-TSOP1-0820F/R  
1. The parameters are tested with 50pF test load  
PIN DESCRIPTION  
FUNCTIONAL BLOCK DIAGRAM  
A11  
A9  
A8  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
Clk gen.  
Precharge circuit.  
A10  
CS1  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
VSS  
I/O3  
I/O2  
I/O1  
A0  
A13  
WE  
CS2  
A15  
VCC  
NC  
A16  
A14  
A12  
A7  
VCC  
A15  
CS2  
WE  
N.C  
A16  
A14  
A12  
A7  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
2
32-TSOP  
Type1-Forward  
3
9
10  
11  
12  
13  
14  
15  
16  
4
Memory array  
1024 rows  
128´ 8 columns  
Raw  
Address  
Row  
select  
A13  
A8  
5
6
A6  
32-SOP  
32-DIP  
A6  
A5  
A4  
A1  
A2  
A3  
A9  
A5  
7
A11  
OE  
A4  
8
9
A3  
A4  
A5  
A6  
16  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
A3  
A10  
CS1  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
A2  
10  
11  
12  
13  
14  
15  
16  
A2  
A1  
A0  
A1  
A7  
A12  
A14  
A16  
NC  
VCC  
A15  
CS2  
WE  
A13  
A8  
A0  
I/O1  
I/O2  
I/O3  
VSS  
I/O4  
I/O5  
I/O6  
I/O7  
I/O8  
CS1  
A10  
OE  
Data  
cont  
I/O Circuit  
I/O1  
I/O8  
I/O1  
I/O2  
I/O3  
VSS  
32-TSOP  
Type1-Reverse  
Column select  
Data  
cont  
4
3
2
1
A9  
A11  
Column Address  
Name  
CS1, CS2  
OE  
Function  
Chip Select Input  
Output Enable Input  
Write Enable Input  
Data Inputs/Outputs  
Address Inputs  
Power  
CS1  
Control  
logic  
CS2  
WE  
WE  
OE  
I/O1~I/O8  
A0~A16  
Vcc  
Vss  
Ground  
N.C.  
No Connection  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.  
2
Revision 3.0  
March 2000  
 复制成功!