Industrial Temperature
K4E660412E,K4E640412E
DC AND OPERATING CHARACTERISTICS
(Continued)
Symbol
Power
Speed
K4E660412E
I
CC1
Don′t care
-45
-50
-60
Don′t care
-45
-50
-60
-45
-50
-60
Don′t care
-45
-50
-60
Don′t care
Don′t care
90
80
70
1
1
90
80
70
100
90
80
0.5
200
120
110
100
350
350
Max
K4E640412E
120
110
100
1
1
120
110
100
100
90
80
0.5
200
120
110
100
350
350
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
Units
CMOS DRAM
I
CC2
Normal
L
I
CC3
Don′t care
I
CC4
Don′t care
I
CC5
Normal
L
I
CC6
Don′t care
I
CC7
I
C C S
L
L
I
CC1
* : Operating Current (RAS and CAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, CAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
I H
)=V
C C
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=CAS-before-RAS cycling or 0.2V
W, OE =V
I H
, Address=Don′t care, DQ=Open, T
R C
=31.25us
I
CCS
: Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=V
CC
-0.2V or 0.2V, DQ0 ~ DQ3=V
CC
-0.2V, 0.2V or Open
*Note :
I
CC1
, I
CC3
, I
C C 4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
C C 3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
