Industrial Temperature
K4E660412E,K4E640412E
AC CHARACTERISTICS
Parameter
Data hold time
Refresh period (Normal)
Refresh period (L-ver)
Write command set-up time
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hold time (CAS -before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper Page cycle time
Hyper Page read-modify-write cycle time
CAS precharge time (Hyper page cycle)
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
CAS precharge to W delay time
Output buffer turn off delay time from OE
OE command hold time
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
Output data hold time
Output buffer turn off delay from RAS
Output buffer turn off delay from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width (Hyper Page Cycle)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
CMOS DRAM
-45
Min
Max
Min
7
64
128
0
24
57
35
5
10
5
24
17
47
6.5
45
24
12
8
36
3
5
10
10
10
10
4
3
3
8
5
5
5
5
100
74
-50
13
13
11
10
41
3
5
10
10
10
10
5
3
3
15
5
5
5
5
100
90
-50
13
13
13
200K
20
47
7
50
30
13
13
52
3
5
10
10
10
10
5
3
3
15
5
5
5
5
100
110
-50
13
13
13
200K
0
27
64
39
5
10
5
28
25
56
10
60
35
15
200K
64
128
0
32
77
47
5
10
5
35
-50
Max
Min
10
64
128
-60
Max
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
15,16,17
15,16,17
15,16,17
6,13
6
11
11
6
3
3
14
14
7
7
7
7
9
(Continued)
Symbol
Units
Note
t
D H
t
R E F
t
R E F
t
WCS
t
CWD
t
R W D
t
AWD
t
CSR
t
CHR
t
RPC
t
CPA
t
HPC
t
HPRWC
t
C P
t
RASP
t
RHCP
t
OEA
t
OED
t
CPWD
t
OEZ
t
OEH
t
WTS
t
WTH
t
WRP
t
WRH
t
DOH
t
R E Z
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
t
RASS
t
RPS
t
CHS
7
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
