Industrial Temperature
K4E660412E,K4E640412E
CAPACITANCE
(T
A
=25°C,
Parameter
Input capacitance [A0 ~ A12]
Input capacitance [RAS , CAS, W, OE ]
Output capacitance [DQ0 - DQ3]
CMOS DRAM
Symbol
C
IN1
C
IN2
C
DQ
Min
-
-
-
Max
5
7
7
Units
pF
pF
pF
V
CC
=3.3V, f=1MHz)
AC CHARACTERISTICS
(-40°C≤T
A
≤85°C,
See note 2)
Test condition : V
C C
=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
OE to output in Low-Z
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Symbol
Min
-45
Max
Min
84
113
45
12
23
3
3
3
1
25
45
8
35
7
11
9
5
0
7
0
7
23
0
0
0
7
6
8
7
0
5K
33
22
10K
50
13
3
3
3
1
30
50
8
38
8
11
9
5
0
7
0
7
25
0
0
0
7
7
8
7
0
10K
37
25
10K
50
13
50
13
25
3
3
3
1
40
60
10
40
10
14
12
5
0
10
0
10
30
0
0
0
10
10
10
10
0
10K
45
30
10K
50
13
-50
Max
Min
104
138
60
15
30
-60
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
9
8
8
16
4
10
3,4,10,12
3,4,5,12
3,10,12
3
6,13
3
2
Units
Note
t
R C
t
R W C
t
RAC
t
CAC
t
AA
t
CLZ
t
CEZ
t
OLZ
t
T
t
R P
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
W P
t
R W L
t
CWL
t
D S
74
101
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
