K4E171611D, K4E151611D
K4E171612D, K4E151612D
DC AND OPERATING CHARACTERISTICS
(Continued)
Symbol
Power
Speed
-45
-50
-60
Don′t care
-45
-50
-60
-45
-50
-60
Don′t care
-45
-50
-60
Don′t care
Don′t care
Max
K4E171612D
100
90
80
1
1
100
90
80
110
100
90
0.5
200
100
90
80
300
150
K4E151612D
150
140
130
1
1
150
140
130
110
100
90
0.5
200
150
140
130
200
150
K4E171611D
100
90
80
2
1
100
90
80
110
100
90
1
200
110
90
80
350
200
CMOS DRAM
K4E151611D
150
140
130
2
1
150
140
130
110
100
90
1
200
150
140
130
250
200
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
I
CC1
Don′t care
Normal
L
Don′t care
I
CC2
I
CC3
I
CC4
Don′t care
Normal
L
Don′t care
L
L
I
CC5
I
CC6
I
CC7
I
CCS
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @t
RC
=min.)
I
CC4
* : Hyper Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @t
HPC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=0.2V,
DQ=Don′t care, T
RC
=31.25us(4K/L-ver), 125us(1K/L-ver)
T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=V
IL
, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Hyper page mode cycle time, t
HPC
.
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
