K4E171611D, K4E151611D
K4E171612D, K4E151612D
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
3.3V
V
IN,
V
OUT
V
CC
Tstg
P
D
I
OS
Address
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
1
50
Rating
CMOS DRAM
Units
5V
-1.0 to +7.0
-1.0 to +7.0
-55 to +150
1
50
V
V
°C
W
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
Min
V
CC
V
SS
V
IH
V
IL
3.0
0
2.0
-0.3
*2
3.3V
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
*1
0.8
Min
4.5
0
2.4
-1.0
*2
5V
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1.0
*1
0.8
V
V
V
V
Units
*1 : V
CC
+1.3V/15ns(3.3V), V
CC
+2.0V/20ns(5V), Pulse width is measured at V
CC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at V
SS
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Max
Parameter
Input Leakage Current (Any input 0≤V
IN
≤V
IN
+0.3V,
all other input pins not under test=0 Volt)
3.3V
Output Leakage Current
(Data out is disabled, 0V≤V
OUT
≤V
CC
)
Output High Voltage Level(I
OH
=-2mA)
Output Low Voltage Level(I
OL
=2mA)
Input Leakage Current (Any input 0≤V
IN
≤V
IN
+0.5V,
all other input pins not under test=0 Volt)
5V
Output Leakage Current
(Data out is disabled, 0V≤V
OUT
≤V
CC
)
Output High Voltage Level(I
OH
=-5mA)
Output Low Voltage Level(I
OL
=4.2mA)
Symbol
I
I(L)
I
O(L)
V
OH
V
OL
I
I(L)
I
O(L)
V
OH
V
OL
Min
-5
-5
2.4
-
-5
-5
2.4
-
Max
5
5
-
0.4
5
5
-
0.4
Units
uA
uA
V
V
uA
uA
V
V
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
