S T U/D9410
1.15
1.10
1.4
ID=250uA
V
DS =V G S
1.3
I
D=250uA
1.2
1.1
1.0
0.9
1.05
1.00
0.95
0.90
0.85
0.8
0.7
0
75
-50 -25
25
50
125
100
-50 -25
0
25 50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
20.0
15
12
10.0
9
6
3
V
DS =5V
15
1.0
0
0
5
10
20
0.4
0.6
0.8
1.0
1.2
1.4
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
80
60
10
V
DS =15V
t
i
m
i
L
)
I
D
=1A
N
O
(
R DS
8
6
4
10
1
0
m
s
1
s
0
0
m
s
1
1
1
D
C
V
G S =10V
0.1
2
0
S ingle P ulse
=25 C
T
A
0.03
0.1
1
10
30 50
0
2
4
6
8
10 12 14 16
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
