S T U/D9410
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =20A
Min Typ Max Unit
1
1.3
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
10
V
G S
=10,9,8,7,6,5,4V
8
20
25
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
6
V
G S
=2.5V
4
15
25 C
10
T j=125 C
2
V
G S
=1.5V
0
0
2
4
6
8
10
12
5
-55 C
0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
R
DS (ON)
, On-R es is tance(Ohms )
900
750
2.2
1.8
1.4
1.0
0.6
0.2
F igure 2. Trans fer C haracteris tics
V
G S
=10V
I
D
=25A
C , C apacitance (pF )
600
450
300
150
C rss
0
0
5
10
15
20
C os s
C is s
25
30
0
-55
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
