STU/D330S
Ver 1.0
90
75
60
20.0
Is, Source-drain current(A)
I
D
=20A
10.0
5.0
25 C
125 C
75 C
R
DS(on)
(m
Ω
)
45
125 C
30
15
0
75 C
25 C
0
2
4
6
8
10
1.0
0
0.3
0.6
0.9
1.2
1.5
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
900
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
6
4
2
0
V
DS
=15V
I
D
=20A
750
600
C is s
450
300
C os s
150
C rs s
0
0
5
10
15
20
25
30
V
GS
, Gate to Source Voltage(V)
C, Capacitance(pF)
0
2
4
6
8
10
12
14 16
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
200
I
D
, Drain Current(A)
200
100
it
1m
DC
Switching Time(ns)
100
60
10
Tr
Tf
10
R
DS
(O
L
N)
im
10
0u
s
10
s
ms
1
1
V DS =15V ,ID=1A
V G S =10V
1
V
G S
=10V
S ingle P ulse
T
A
=25 C
1
10
30
100
6 10
60 100 300 600
0.1
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,03,2008
4
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
