S T U309D
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =10A
V
GS
= 0V, Is =-6A
N-Ch
P-Ch
Min Typ Max Unit
0.9
-0.9
1.3
-1.3
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
V
Notes
a.Pulse Test:Pulse Width 300 s,Duty Cycle 2%.
b.Guaranteed by design,not subject to production testing.
N-Channel
48
V
G S
=4.5V
40
16
20
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
V
G S
=8V
32
V
G S
=10V
-55 C
12
T j=125 C
8
25 C
4
0
24
16
8
0
V
G S
=3.5V
V
G S
=3V
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
2.4
3.2
4.0
4.8
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
30
1.5
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
25
V
G S
=4.5V
1.4
1.3
1.2
1.1
1.0
0.0
V
G S
=4.5V
I
D
=8A
V
G S
=10V
I
D
=10A
R
DS (on)
(m
Ω
)
20
15
V
G S
=10V
10
5
0
1
6
12
18
24
30
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
