S T U309D
S amHop Microelectronics C orp.
Nov 22 2006
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y
(N-C hannel)
V
DS S
30V
P R ODUC T S UMMAR Y
(P -C hannel)
V
DS S
-30V
I
D
18A
R
DS (ON) ( m
Ω
)
Max
I
D
-14A
R
DS (ON) ( m
Ω
)
Max
23 @ V
G S
= 10V
35 @ V
G S
= 4.5V
D
1
35 @ V
G S
= -10V
55 @ V
G S
= -4.5V
D
2
D1/D2
G
1
G
2
S1
G1
S2
G2
TO-252-4L
S
1
N-ch
S
2
P -ch
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Tc
-P ulsed
a
S ymbol
V
DS
V
GS
25 C
70 C
I
D
I
DM
I
S
Tc= 25 C
P
D
Tc= 70 C
N-C hannel P-C hannel
30
20
18
15
50
10
11
7.7
-30
20
-14
-12
-50
-6
Unit
V
V
A
A
A
A
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
W
C
T
J
, T
S TG
-55 to 175
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
1
R
JC
R
JA
13.6
120
C /W
C /W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
