S TU/D1855PLS
1.3
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
V
DS
=V
GS
I
D
=-250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
I
D
=-250uA
75
100 125
75
100 125
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
18
15
12
9
6
3
0
V
DS
=-15V
0
5
10
15
20
25
Figure 6. Breakdown Voltage Variation
with Temperature
20
10
g
FS
, Transconductance (S)
-Is, Source-drain current (A)
1
0
0.4
0.6
0.8
1.0
T
J
=25 C
1.2
1.4
-I
DS
, Drain-Source Current (A)
-V
SD
, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
10
-V
GS
, Gate to Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
60
8
6
4
2
0
0
V
DS
=-30V
I
D
=-5A
-I
D
, Drain Current (A)
10
R
DS
)
(ON
Lim
it
10
10
0m
ms
1
DC
1s
s
0.1
0.03
V
GS
=-10V
Single Pulse
Tc=25 C
0.1
1
10
30 60
3
6
9
12
15
18
21 24
Qg, Total Gate Charge (nC)
-V
DS
, Drain-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe
Operating Area
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
