S TU/D1855PLS
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
5
Symbol
b
Condition
Min Typ Max Unit
-0.9 -1.3
V
C
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
GS
= 0V, Is =-10A
V
SD
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external R g=6 ohm and tf < tf max
20
20
-V
GS
=10V
-V
GS
=4V
15
16
-V
GS
=8V
-I
D
, Drain Current(A)
-I
D
, Drain Current (A)
-V
GS
=4.5V
12
10
8
4
0
5
Tj=125 C
1
0
25 C
-55 C
2.4
3.2
4.0
4.8
-V
GS
=3V
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
Ciss
2.2
Figure 2. Transfer Characteristics
V
GS
=-10V
I
D
=-10A
800
600
400
200
0
R
DS(ON)
, On-Resistance
Normalized
Coss
10
15
20
25
30
1.8
1.4
1.0
0.6
0.2
0
C, Capacitance (pF)
Crss
0
5
-50
-25
0
25
50
75
100
125
-V
DS
, Drain-to Source Voltage (V)
TJ, Junction Temperature ( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
