S T S 8215
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =1.25A
Min Typ Max Unit
0.76
1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
15
V
G S
=8V
V
G S
=3V
12
V
G S
=2.5V
12
V
G S
=2V
16
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
9
8
6
T j=125 C
3
25 C
0
0.0
-55 C
4
V
G S
=1.5V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0.4
0.8
1.2
1.6
2.0
2.4
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
60
1.5
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
50
1.4
1.3
1.2
1.1
1.0
0
V
G S
=2.5V
I
D
=3A
V
G S
=4V
I
D
=5A
R
DS (on)
(m
Ω
)
40
V
G S
=2.5V
30
20
10
1
V
G S
=4V
1
4
8
12
16
20
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
