S T S 4501
900
750
10
-V
GS
, Gate to Source Voltage (V)
Ciss
8
6
4
2
0
V
DS
=-28V
I
D
=-3.5A
C, Capacitance (pF)
600
450
300
150
Crss
0
0
5
10
15
20
25
30
Coss
0
2
4
6
8
10
12
14 16
-V
DS
, Drain-to Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 10. Capacitance
400
-I
D
, Drain C urrent (A)
20
10
R
DS
Switching Time (ns)
100
60
Tf
TD(off )
Tr
TD(on)
(O
L
N)
im
it
10
10
ms
10
1
DC
1s
0m
s
1
1
VDS=-20V,ID=-1A
VGS=-10V
0.1
0.03
V
G S
=-10V
S ingle P ulse
T c=25 C
0.1
1
10
30 50
6 10
60 100
300 600
Rg, Gate Resistance (
Ω
)
-V
DS
, Drain-Source Voltage (V)
Figure 12.switching characteristics
10
Figure 13. Maximum Safe
Operating Area
Norm aliz ed Transien t
Therma l R esis tanc e
1
0.5
0.2
P
DM
t
1
t
2
1.
2.
3.
4.
R
thJ A
(t)=r (t) * R
thJ A
R
thJ A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
thJ A
(t)
Duty C ycle, D=t
1
/t
2
0. 1
0.1
0.05
0.02
0.01
Single Pulse
0.000 1
0.001
0.01
0. 1
1
10
0.01
0.0000 1
100
1000
Square Wave Puls e D uration(sec)
Normalized Therma l T ransient Impedanc e C urve
5
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
