S T S 4501
S amHop Microelectronics C orp.
Oc t. 12,2007
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
Ω
) Max
65 @ V
G S
= -10V
-40V
-3.5A
85 @ V
G S
= -4.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S OT-23 P ackage.
D
S OT-23
D
S
G
G
S
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ T
J
=25 C
b
-P ulsed
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation
a
Operating Junction and S torage
Temperature R ange
S ymbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
- 40
20
-3.5
- 14
-1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
JA
100
C /W
1
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
