S T S 3400
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125
V
DS
=V
G S
I
D
=250uA
1.3
I
D
=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
with T emperature
12
F igure 6. B reakdown V oltage V ariation
with T emperature
20
g
F S
, T rans conductance (S )
8
6
4
2
0
0
5
10
15
V
DS
=5V
20
25
Is , S ource-drain current (A)
10
10
1
0
0.4
0.6
0.8
1.0
T
J
=25 C
1.2
1.4
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
10
I
D
, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
V
G S
, G ate to S ource V oltage (V )
8
6
4
2
0
0
V
DS
=10V
I
D
=3.5A
10
R
D
S
(O
L
N)
im
it
10
11
DC
10
ms
0m
s
1s
0.1
0.03
V
G S
=4.5V
S ingle P ulse
T c=25 C
0.1
1
10
20
50
2
4
6
8
10
12 14
16
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe
O perating Area
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
