S T S 3400
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =1.25A
Min Typ Max Unit
0.82
1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
V
G S
=5V
16
20
V
G S
=10,9,8,7,6V
25
25 C
-55 C
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
T j=125 C
15
12
V
G S
=4V
8
4
0
10
V
G S
=3V
5
0
0.0
0
1
2
3
4
5
6
0.6
1.2
1.8
2.4
3.0
3.6
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
2.2
1000
1.8
800
600
400
200
C rs s
0
0
5
10
15
20
25
30
0
C is s
F igure 2. Trans fer C haracteris tics
V
G S
=10V
I
D
=3.5A
R
DS(ON)
, On-Resistance
(Normalized)
C , C apacitance (pF )
1.4
1.0
0.6
0.2
C os s
-50
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
