STB/P80L60
Ver2.0
30
60
I
D
=40A
20
125 C
15
75 C
10
5
0
25 C
Is , S ource-drain current (A)
25
R
DS (on)
(m
Ω
)
125 C
25 C
10
75 C
0
2
4
6
8
10
1
0
0.25
0.50
0.75
1.00
1.25
V
G S
, G ate- S ource Voltage (V )
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltag
e
V ariation with S ource C urrent
10
V
G S
, G ate to S ource V oltage (V )
6000
5000
C , C apacitance (pF )
Ciss
4000
3000
2000
1000
0
0
Crss
5
10
15
20
25
30
8
6
4
2
0
0
V
DS
=30V
I
D
=25A
Coss
8
16
24
32
40
48
56
64
V
DS
, Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
1000
1000
it
10
1m
s
S witching T ime (ns )
TD(off )
I
D
, Drain C urrent (A)
100
R
DS
100
TD(on)
Tr
(O
L
N)
im
0u
s
Tf
10
10
m
DC
s
10
1
VDS=30V,ID=1A
VGS=10V
1
1
10
100
V
GS
=10V
Single Pulse
T
A
=25 C
0.1
1
10
0.1
R g, G ate R es is tance (
W
)
V
DS
, Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 12. Maximum S afe
O perating Area
Sep,17,2010
4
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