Green
Product
STB/P80L60
Ver2.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
60V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
I
D
80A
R
DS(ON)
(m
Ω
) Typ
9.5
@
VGS=10V
13.5
@
VGS=4.5V
D
D
G
D
S
G
S
G
S TP S E R IE S
TO-220
S TB S E R IE S
TO-263(DD-P AK)
S
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
Limit
60
±20
T
C
=25°C
T
C
=70°C
80
68
250
420
T
C
=25°C
T
C
=70°C
130
91
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JC
R
JA
Thermal Resistance, Junction-to-Case
a
a
1.15
62.5
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Sep,17,2010
1
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
