S T M8457
1500
V
G S
, G ate to S ource V oltage (V )
10
8
6
4
2
0
V
DS
=-24V
I
D
=-4A
1250
C , C apacitance (pF )
C is s
1000
750
500
C os s
250
C rs s
0
0
5
10
15
20
25
30
6
0
2
4
6
8
10
12
14 16
V
DS
, Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
600
S witching T ime (ns )
V DS = -20V,ID= -1A
V G S = -10 V
80
I
D
, Drain C urrent (A)
100
60
10
10
R
D
S
TD(off)
Tr
TD(on)
Tf
(O
L
N)
im
it
10
10
1s
DC
ms
0m
s
1
0.1
0.03
1
1
6 10
60 100 300 600
V
G S
=-10V
S ingle P ulse
T
A
=25 C
0.1
1
10
30 50
R g, G ate R es is tance (
W
)
V
DS
, Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
9
F igure 12. Maximum S afe
O perating Area
Normalized Transient
Thermal Resistance
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
on
P
DM
t
1
1.
2.
3.
4.
t
2
0.01
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
10
R
thJ A
(t)=r (t) * R
thJ A
R
thJ A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
thJ A
(t)
Duty C ycle, D=t
1
/t
2
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
9
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
