S TM8457
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
C
Typ Max
Parameter
Condition
Min
Unit
V
Symbol
b
DRAIN-SOURCE DIODE CHARACTERISTICS
V
V
GS = 0V, Is =1.7A
GS = 0V, Is =-1.7A
N-Ch
P-Ch
0.78
-0.77
1.2
Diode Forward Voltage
V
SD
-1.2
Notes
a.S urface Mounted on FR 4 Board, t <=10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
N-Channel
30
15
12
VG S =4V
24
V
G S =4.5V
VG S =8V
18
12
6
9
6
Tj=125 C
-55 C
VG S =10V
3
0
V
G S =3V
2.5
25 C
0
0.8
1.6
2.4
3.2
4.0
4.8
0
0.5
1
2
3
1.5
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
45
2.0
1.8
1.6
1.4
1.2
1.0
0
40
35
V
G S =10V
=5A
VG S =4.5V
VG S =10V
I
D
30
25
V
G S =4.5V
=4A
I
D
20
1
150
1
25
50
75
125
6
12
18
24
30
100
0
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
