S TM8306
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
C
Typ Max
Parameter
Condition
Min
Unit
V
Symbol
b
DRAIN-SOURCE DIODE CHARACTERISTICS
V
V
GS = 0V, Is =1.7A
GS = 0V, Is =-1.7A
N-Ch
P-Ch
0.79 1.2
-0.77
Diode Forward Voltage
V
SD
-1.2
5
Notes
＜
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300μ s, Duty Cycle 2%.
＜
＜
c.Guaranteed by design, not subject to production testing.
N-Channel
25
20
15
10
20
VGS=4,4.5~10V
16
12
VGS=3.5V
8
Tj=125 C
-55 C
25 C
VGS=3V
5
4
0
5
0
0.0
1
2
3
4
5
6
0
1
2
3
4
6
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.8
1200
V
G S =10V
=7A
I
D
1000
800
1.4
Ciss
600
1.0
0.6
400
200
0
Coss
0.4
0
Crss
-50 -25
0
25 50
75 100 125 150
Tj( C)
0
5
10
15
20
25
30
ID, Drain Current(A)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
