S TM8306
=
25 C unless otherwise noted)
P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
Typ C Max
P arameter
C ondition
Min
Unit
V
S ymbol
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
-30
BVDS S
I
I
DS S
G S S
V
V
DS -24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
=
=
uA
nA
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
-1.7
29
V
G S (th)
-1
-3
V
G ate Threshold Voltage
=
V
V
V
V
V
DS
V
G S , I = -250uA
D
m ohm
38
52
=
=
D
G S -10V, I
G S =-4.5V, I
DS = -15V, VG S = -10V
-5A
Drain-S ource On-S tate R esistance
R
DS (ON)
42
m ohm
D
= -4A
-20
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
9.6
Forward Transconductance
=
DS -15V, I - 5A
=
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
P
P
P
F
F
F
850
235
150
C
IS S
V
DS =-15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
11
23
Turn-On Delay Time
t
D(ON)
ns
ns
V
R
D
= -15V,
L
=15 ohm,
R ise Time
tr
I
D
= -1A,
G E N = -10V,
GE N =6 ohm
Turn-Off Delay Time
Fall Time
tD(OFF)
45
48
ns
ns
V
R
tf
nC
nC
nC
nC
V
V
DS =-15V,I
DS =-15V,I
D
=-5A,VG S =-10V
17.1
9.3
Q
g
Total G ate C harge
D
=-5A,VG S =-4.5V
G ate-S ource C harge
G ate-Drain C harge
Q
Q
gs
1.5
V
V
DS =-15V, I
G S =-10V
D
= - 5A,
gd
5.5
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
