STM6960
ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
Parameter
5
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
c
Condition
V
GS
0V, I
D
250uA
V
DS
V
GS
48V, V
GS
0V
20V, V
DS
0V
Min Typ
C
Max Unit
60
1
100
1.0
1.8
47
55
20
12
700
80
50
5
13
10
28
7
15
7.5
1.6
4.3
3.0
60
75
V
uA
nA
V
m ohm
m ohm
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
b
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
V
DS
V
GS
, I
D
= 250uA
V
GS
10V, I
D
4.5A
V
GS
4.5V, I
D
3A
V
DS
= 5V, V
GS
= 10V
V
DS
5V, I
D
4.5A
A
S
P
F
P
F
P
F
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
C
ISS
C
OSS
C
RSS
Rg
c
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
ohm
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
t
t
D(OFF)
t
Q
g
Q
gs
Q
gd
V
DD
= 30V
I
D
= 4.5 A
V
GS
= 10V
R
GEN
= 3 ohm
V
DS
=48V, I
D
=4.5A,V
GS
=10V
V
DS
=48V, I
D
=4.5A,V
GS
=4.5V
V
DS
=48V, I
D
= 4.5 A
V
GS
=10V
2
ns
ns
ns
ns
nC
nC
nC
nC
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
