STM6960
SamHop Microelectronics Corp.
Nov 12 2007 Ver1.1
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
60V
FEATURES
( m
W
) Max
I
D
5A
R
DS(ON)
Super high dense cell design for low R
DS(ON
).
60 @ V
GS
= 10V
75 @ V
GS
= 4.5V
Rugged and reliable.
Surface Mount Package.
D
1
8
D
1
7
D
2
6
D
2
5
SO-8
1
1
2
3
4
S
1
G
1
S
2
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @Ta
-Pulsed
b
a
Symbol
V
DS
V
GS
25 C
70 C
I
D
I
DM
I
S
Ta= 25 C
Ta=70 C
P
D
T
J
, T
STG
Limit
60
20
5
4.3
25
1.7
2
1.44
-55 to 150
Unit
V
V
A
A
A
A
W
C
Drain-Source Diode Forward Current
a
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
a
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
1
R
JA
62.5
C /W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
