STM4886
Ver 1.0
15.0
12.5
20.0
Is, Source-drain current(A)
I
D
=17 A
10.0
5.0
25 C
R
DS(on)
(m
Ω
)
10.0
7.5
5.0
2.5
0
75 C
25 C
125 C
125
125 C
75 C
1.0
0
2
4
6
8
10
0
0.24
0.48
0.72
0.96
1.20
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
3600
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
GS
, Gate to Source Voltage(V)
3000
C, Capacitance(pF)
Ciss
2400
1800
1200
Coss
600
Crss
0
0
5
10
15
20
25
30
8
6
4
2
0
0
V
DS
= 15V
I
D
=17 A
9
18
27
36
45
54
63 72
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
6000
60
I
D
, Drain Current(A)
R
D
Tr
S
(O
L
N)
im
it
10
0u
s
Switching Time(ns)
1000
600
TD(off)
Tf
10
10
1s
DC
1m
10
0m
ms
s
100
TD(on)
s
1
V
G S
=10V
S ingle P ulse
T
A
=25 C
1
10
1
6 10
V DS =15V ,ID=17A
V G S =10V
0.1
0.1
60 100 300 600
10
30 50
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Mar,24,2008
4
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