STM4886
Ver 1.0
25
V G S = 4.5V
V G S = 10V
20
I
D
, Drain Current(A)
V G S =3 V
I
D
, Drain Current(A)
20
16
15
12
125 C
8
25 C
4
0
-55 C
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
7
V
G S
=4.5V
6
Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0
V
G S
=4.5V
I
D
=13.5A
V
G S
=10V
I
D
= 17 A
R
DS(on)
(m
Ω
)
5
4
V
G S
=10V
3
2
1
1
5
10
15
20
25
R
DS(on)
, On-Resistance
Normalized
0
25
50
75
100
125
150
T j (
°C )
I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.15
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Vth, Normalized
Gate-Source Threshold Voltage
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
V
DS
=V
G S
I
D
=250uA
75 100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Mar,24,2008
3
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
